Part Number Hot Search : 
SB105 BB679 092316 MUR1640 IRF1407 084AC 3R3NZ HCS125
Product Description
Full Text Search
 

To Download DG271MIL Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 DG271MIL
Vishay Siliconix
High-Speed Quad Monolithic SPST CMOS Analog Switch
FEATURES
D D D D D Fast Switching tON: 55 ns Low Charge Injection: 5 pC Low rDS(on): 32 W TTL/CMOS Compatible Low Leakage: 50 pA
BENEFITS
D Fast Settling Times D Reduced Switching Glitches D High Precision
APPLICATIONS
D D D D D D D D High-Speed Switching Sample/Hold Digital Filters Op Amp Gain Switching Flight Control Systems Automatic Test Equipment Choppers Communication Systems
DESCRIPTION
The DG271 high speed quad single-pole single-throw analog switch is intended for applications that require low on-resistance, low leakage currents, and fast switching speeds. The military version of the DG271 is manufactured using the Vishay Siliconix high voltage metal gate wafer fabrication process. The military version of the DG271 shares the same performance of the commercial DG271B, which uses the high voltage silicon gate process.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
CerDIP D1 IN1 D1 S1 V- GND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ NC NC GND S3 S4 D3 IN3 9 D4 10 Key 3 S1 V- 4 5 6 7 8 2
Ceramic LCC IN1 NC 1 IN2 20 D2 19 18 17 16 15 14 S2 V+ NC NC S3
11
12
13 D3
IN4
NC IN3 Top View
TRUTH TABLE
Logic
0 1 Logic "0" v 0.8 V 0 Logic "1" w 2.4 V Document Number: 70043 S-63984--Rev. G, 23-Aug-99 www.vishay.com S FaxBack 408-970-5600
Switch
ON OFF
4-1
DG271MIL
Vishay Siliconix
ORDERING INFORMATION
Temp Range Package
16-Pin CerDIP 16 Pi C DIP -55 to 125 C 55 125_C LCC-20
Part Number
DG271AK DG271AK/883 5962-8671602MEA DG271AZ/883 5962-8671602M2A
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 20 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (AK and AZ Suffix) . . . . . . . . . . . . . . . . . . -65 to 150_C Power Dissipation (Package)b 16-Pin CerDIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW LCC-20d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 mW
Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 12 mW/_C above 75_C d. Derate 10 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+ 5V Reg Level Shift/ Drive INX V- V+
SX
DX
GND V-
FIGURE 1.
www.vishay.com S FaxBack 408-970-5600
4-2
Document Number: 70043 S-63984--Rev. G, 23-Aug-99
DG271MIL
Vishay Siliconix
SPECIFICATIONSa
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) + IS(on) VS = VD = "14 V VD = "14 V, VS = #14 V IS = 1 mA, VD = "10 V Full Room Full Room Full Room Full Room Full -1 -60 -1 -60 -1 -60 -15 32 "0.05 "0.05 "0.05 15 50 75 1 60 1 60 1 60 nA A V W
A Suffix
-55 to 125_C
Symbol
V+ = 15 V, V- = -15 V VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Typc
Maxd
Unit
Digital Control
Input Current with Voltage High Input Current with Voltage Low IINH IINL VIN = 2 V VIN = 15 V VIN = 0 V Full Full Full -1 -1 -1 0.010 0.010 0.010 1 1 1 mA A
Dynamic Characteristics
Turn-On Time Turn-Off Time tON tOFF CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W See Figure 3 VS = 0 V, VIN = 5 V , f = 1 MHz MH VD = VS = 0 V, VIN = 0 V CL = 10 pF, RL = 1 kW f = 100 kHz See Figures 4 and 5 VS = "10 V See Figure 3 S Fi Room Full Room Full Room Room Room Room Room Room 55 50 65 80 ns 65 80 pC
Charge Injection Source Off Capacitance Drain Off Capacitance Channel On Capacitance Off Isolation Crosstalk
Q CS(off) CD(off) CD(on) OIRR XTALK
-5 8 8 30 85
pF F
dB 100
Supply
Positive Supply Current Negative Supply Current I+ I- All Channels On or Off VIN = 5 V or 0 V Room Full Room Full -6 -8 5.5 -3.4 7.5 9 mA
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
Document Number: 70043 S-63984--Rev. G, 23-Aug-99
www.vishay.com S FaxBack 408-970-5600
4-3
DG271MIL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply Voltages
70 r DS(on) Drain-Source On-Resistance (W ) - r DS(on) Drain-Source On-Resistance ( ) - W 60 50 40 "10 V 30 20 "20 V 10 0 -20 -16 -12 -8 -4 0 4 8 12 16 20 VD - Drain Voltage (V) "15 V 50 V+ = 15 V V- = -15 V 40 125_C 30 85_C 25_C 20 0_C -55_C 10
rDS(on) vs. VD and Temperature
"5 V
0 -15
-10
-5
0
5
10
15
VD - Drain Voltage (V)
Input Switching Threshold vs. Supply Voltage
2.5 10 nA
Leakage Currents vs. Temperature
ID(on) 2 1 nA V IN ( V ) Leakage 1.5
1
IS(off), ID(off) 100 pA
0.5
0 "4 "6 "8 "10 "12 "14 "16 "18 "20 Positive/Negative Supplies (V)
10 pA -55 -35 -15 5 25 45 65 85 105 125 Temperature (_C)
Switching Times vs. Temperature
55 V+ = 15 V V- = -15 V 50 Switching Time (ns) Switching Time (ns) tON 50 55
Switching Time vs. Power Supply Voltage
45
45
40
tOFF
40
tON
35
35
tOFF
30 -55
30 -25 0 25 50 75 100 125 "4 "6 "8 "10 "12 "14 "16 "18 "20
Temperature (_C)
Supply Voltage (V)
www.vishay.com S FaxBack 408-970-5600
4-4
Document Number: 70043 S-63984--Rev. G, 23-Aug-99
DG271MIL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Times vs. Temperature
90 V+ = 15 V V- = -15 V 180 160 140 70 t(on) Switching Time (ns) 120 100 80 60 40 "4
Switching Times vs. Power Supply Voltage
80 Switching Time (ns)
60
t(on)
50
t(off)
40
t(off)
30 -55
-35
-15
5
25
45
65
85
105
125
"6
"8
"10
"12 "14 "16
"18 "20
Temperature (_C)
V+ - Positive Supply (V)
TEST CIRCUITS
+15 V
Logic Input
5V 50% 0V tOFF VS VO VO tON 90%
tr <20 ns tf <20 ns
V+ 10 V S IN 5V GND V- RL 1 kW CL 35 pF D VO
Switch Input Switch Output
CL (includes fixture and stray capacitance) -15 V VO = VS RL RL + rDS(on)
FIGURE 2. Switching Time
Document Number: 70043 S-63984--Rev. G, 23-Aug-99
www.vishay.com S FaxBack 408-970-5600
4-5


▲Up To Search▲   

 
Price & Availability of DG271MIL

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X